2SK3416 no.7440-1/4 features ? low on-resistance. ? ultrahigh-speed switcing. ? 4v drive. n-channl silicon mosfet ordering number : enn7440 2SK3416 21004 ts im ta-100477 any and all sanyo products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo representative nearest you before using any sanyo products described or contained herein in such applications. sanyo assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo products described or contained herein. dc / dc converter applications package dimensions unit : mm 2083b [2SK3416] sanyo electric co.,ltd. semiconductor company tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan 1 : gate 2 : drain 3 : source 4 : drain sanyo : tp 5.0 6.5 0.85 0.7 0.6 1.5 5.5 7.0 0.8 1.6 7.5 0.5 1.2 2.3 0.5 1 23 4 2.3 2.3 unit : mm 2092b 1 : gate 2 : drain 3 : source 4 : drain sanyo : tp-fa 6.5 2.3 0.5 1.5 5.5 0.8 7.0 1.2 2.5 5.0 0.85 0.5 1.2 0 ` 0.2 2.3 2.3 0.6 12 4 3 [2SK3416]
2SK3416 no.7440-2/4 specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit drain-to-source voltage v dss 60 v gate-to-source voltage v gss 20 v drain current i d 10 a drain current (pulse) i dp pw 10 m s, duty cycle 1% 40 a allowable power dissipation p d 1w tc=25 c20w channel temperature tch 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0 60 v zero-gate voltage drain current i dss v ds =60v, v gs =0 10 m a gate-to-source leakage current i gss v gs = 16v, v ds =0 10 m a cutoff voltage v gs (off) v ds =10v, i d =1ma 1.0 2.4 v forward transfer admittance ? yfs ? v ds =10v, i d =5a 5.6 8 s static drain-to-source on-state resistance r ds (on)1 i d =5a, v gs =10v 74 96 m w r ds (on)1 i d =5a, v gs =4v 98 140 m w input capacitance ciss v ds =20v, f=1mhz 350 pf output capacitance coss v ds =20v, f=1mhz 110 pf reverse transfer capacitance crss v ds =20v, f=1mhz 35 pf turn-on delay time t d (on) see specified test circuit. 7 ns rise time t r see specified test circuit. 25 ns turn-off delay time t d (off) see specified test circuit. 40 ns fall time t f see specified test circuit. 35 ns total gate charge qg v ds =10v, v gs =10v, i d =10a 12 nc gate-to-sourse cahrge qgs v ds =10v, v gs =10v, i d =10a 2 nc gate-to-drain miller cahrge qgd v ds =10v, v gs =10v, i d =10a 3 nc diode forward voltage v sd i s =10a, v gs =0 0.95 1.2 v switching time test circuit pw=10 m s d.c. 1% p. g 50 w g s d i d =5a r l =6 w v dd =30v v out 2SK3416 v in 10v 0v v in
2SK3416 no.7440-3/4 6 4 8 2 10 12 04 2681012 20 80 140 40 100 160 60 120 180 200 0 16 14 18 20 gate-to-source voltage, v gs -- v r ds (on) -- v gs it05357 0 0 0.2 0 2 4 6 12 14 8 10 20 18 16 2.0 0.8 0.4 0.6 1.0 1.2 1.8 1.4 1.6 drain-to-source voltage, v ds -- v i d -- v ds drain current, i d -- a it05355 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 5.0 4.5 4.0 gate-to-source voltage, v gs -- v i d -- v gs drain current, i d -- a it05356 r ds (on) -- tc it05358 --60 --40 --20 0 20 40 60 80 100 120 140 0 80 60 40 20 160 140 120 180 100 v gs =2.5v 3.0v 10.0v 8.0v 3.5v 4.0v 5.0v 6.0v v ds =10v 25 c --25 c ta=75 c 75 c 25 c ta= --25 c tc=25 c i d =5a i d =5a, v gs =4v i d =5a, v gs =10v static drain-to-source on-state resistance, r ds (on) -- m w static drain-to-source on-state resistance, r ds (on) -- m w ambient temperature, ta -- c 0 102030405060 7 3 5 2 7 3 5 2 7 3 5 2 3 2 0.01 0.1 1.0 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 100 1000 7 5 3 2 7 5 3 2 drain-to-source voltage, v ds -- v ciss, coss, crss -- v ds ciss, coss, crss -- pf it05362 it05360 diode forward voltage, v sd -- v forward current, i f -- a i f -- v sd 10 0.1 1.0 10 23 57 23 23 57 100 2 3 5 2 3 7 3 5 7 drain current, i d -- a sw time -- i d switching time, sw time -- ns it05361 drain current, i d -- a it05359 0.001 0.01 0.01 0.1 1.0 10 2 3 57 2 3 57 2 3 57 2 3 57 2 3 10 1.0 0.1 3 5 7 2 3 5 7 2 3 5 7 2 3 2 forward transfer admittance, ? y fs ? -- s ? y fs ? -- i d v ds =10v 75 c ta= --25 c 25 c ta=75 c 25 c --25 c v gs =0 v dd =30v v gs =10v t r t d (on) t d (off) t f ciss crss coss f=1mhz
2SK3416 no.7440-4/4 specifications of any and all sanyo products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo electric co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo electric co. , ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. sanyo believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of february, 2004. specifications and information herein are subject to change without notice. ps 0 0 20 40 60 80 100 120 0.8 0.2 0.4 0.6 1.2 1.0 140 160 ambient temperature, ta -- c p d -- ta allowable power dissipation, p d -- w 0.1 1.0 10 2 3 5 7 2 3 5 7 2 3 5 7 it05365 0 0 20 40 60 80 100 120 20 15 10 5 25 140 160 case temperature, ta -- ?c p d -- tc allowable power dissipation, p d -- w it05366 a s o drain-to-source voltage, v ds -- v drain current, i d -- a it05364 0.1 23 57 23 57 23 57 1.0 10 100 0 0 2 4 6 8 1 3 5 7 9 12 10 11 9 8 4567 123 10 total gate charge, qg -- nc v gs -- qg gate-to-source voltage, v gs -- v it05363 v ds =10v i d =10a i dp =40a i d =10a 10 m s operation in this area is limited by r ds (on). tc=25 c single pulse 100ms 10ms 1ms dc operation 100 m s
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